Semiconductor device

ABSTRACT

Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention resides in a technical field relating tosemiconductor devices. In particular, the present invention resides in atechnical field relating to semiconductor devices that use asemiconductor element such as a transistor.

2. Description of the Related Art

Development of semiconductor devices having light-emitting elements hasbeen advanced in recent years. In addition to the existing advantages ofliquid crystal display devices, the semiconductor devices also havecharacteristics such as fast response speed, superior dynamic display,and a wide angle of view. The semiconductor devices are attractingattention as flat panel displays for the next generation of mobiledevices, which will be capable of utilizing dynamic contents.

A semiconductor device having light-emitting elements has a plurality ofpixels, which each have a light-emitting element and at least twotransistors. The transistor that is connected in series with thelight-emitting element in the pixel (hereinafter written as a drivingtransistor) plays a role in controlling light emitted from thelight-emitting element. The light-emitting element has a structurehaving a first electrode, a second electrode, and a light-emitting layersandwiched between the first electrode and the second electrode. Oneelectrode connected to a source electrode or a drain electrode of thedriving TFT is referred to as a pixel electrode, and the other electrodeis referred to as an opposing electrode.

Static electricity builds up, developing due to friction, contact, andthe like with air and objects such as conductors, semiconductors, andinsulators. Electrostatic discharge occurs if an object is stronglycharged. If this phenomenon develops in a free node such as an inputterminal of the semiconductor device, then minute semiconductor elementsmanufactured on a substrate will degrade or be destroyed. This isreferred to as electrostatic discharge damage.

In order to prevent electrostatic discharge damage, a circuit formed ona substrate (hereinafter written as an internal circuit 64) is connectedto an externally attached IC (hereinafter written as an external circuit61) through a protecting means (also referred to as a protectioncircuit) 63 and an FPC 62 as shown in FIG. 15. The protecting means 63detects a voltage and a current supplied from the external circuit 61 tothe internal circuit 64, and controls the values of the voltage and thecurrent in order to prevent damage to the internal circuit 64 duringabnormal operation.

When manufacturing a semiconductor device having a light-emittingelement, TFTs are first manufactured over a substrate, andlight-emitting elements are manufactured thereafter. More specifically,TFTs are first manufactured over a substrate, and then wirings aremanufactured so as to be electrically connected to source regions anddrain regions of the TFTs. Pixel electrodes of the light-emittingelements are then manufactured so as to be electrically connected to thewirings. The pixel electrodes are in an exposed state when manufacturedup to this point, and therefore static electricity tends to build up inthe pixel electrodes. In particular, the pixel electrodes becomeantennas during manufacturing processes involving charged particles,such as dry etching and electron beam evaporation, and electrostaticdischarge is easily induced. Sudden discharge of electric charge thathas built up in the pixel electrodes leads to degradation or destructionof the semiconductor elements connected to the pixel electrodes.

SUMMARY OF THE INVENTION

In light of the above-mentioned circumstances, an object of the presentinvention is to provide a semiconductor device having a light-emittingelement, in which electrostatic discharge damage during manufacturingprocesses thereof is prevented. More specifically, an object of thepresent invention is to provide a semiconductor device in whichelectrostatic discharge damage is prevented in a state up through themanufacture of pixel electrodes.

In order to resolve the above-mentioned problems, the present inventionprovides a semiconductor device in which a protecting means is formed ineach pixel. The protecting means is provided with one or a plurality ofelements selected from resistor elements, capacitor elements, andrectifying elements. Further, the present invention provides asemiconductor device in which the protecting means is disposed between apixel electrode of a light-emitting element and a source electrode or adrain electrode of a transistor. Note that the aforementioned rectifyingelements are, for example, elements having a rectifying action, andcorrespond to diodes, transistors of which a drain electrode and a gateelectrode are connected, and the like. That is, an essential structureof the present invention is one in which the protecting means is formedin each pixel, and the protecting means is disposed between the pixelelectrode of the light-emitting element, and the source electrode or thedrain electrode of the transistor. The source electrode or the drainelectrode of the transistor is connected to the pixel electrode forcases in which the protecting means is assumed not to be disposed.

If the protecting means is a resistor element, sudden changes in theelectric potential of the source electrode or the drain electrode of thetransistor are relieved by disposing the resistor element between thepixel electrode and the source electrode or the drain electrode of thetransistor so that electric charge that builds up in the pixel electrodeis not supplied all at once and directly to the transistor.

If the protecting means is a capacitor element, sudden changes in theelectric potential of the source electrode or the drain electrode of thetransistor are relieved by accumulating or discharging the electriccharge contained in the capacitor element, and distributing the electriccharge among the capacitor element and the transistor.

If the protecting means is a transistor of which the drain electrode andthe gate electrode are connected, a source electrode of the transistoris connected to an electric power source line. The transistor dischargesthe electric charge that builds up in the pixel electrode to theelectric power source line, and the electric potential of the pixelelectrode is thus set to the same electric potential as that of theelectric power source line, or to an electric potential conformingthereto. Sudden changes in the electric potential of the sourceelectrode or the drain electrode of the transistor caused by theelectric charge that builds up in the pixel electrode can thus berelieved.

If the protecting means is a diode, one electrode of the diode isconnected to the pixel electrode, and the other electrode is connectedto the electric power source line. The electric potential of the pixelelectrode is set to the same electric potential as that of the electricpower source line by discharging the electric charge that builds up inthe pixel electrode to the electric power source line. Sudden changes inthe electric potential of the source electrode or the drain electrode ofthe transistor caused by the electric charge that builds up in the pixelelectrode can thus be relieved.

With the structure described above, the present invention relievessudden changes in the electric potential of the source electrode or thedrain electrode of the transistor due to electric charge that builds upin the pixel electrode, and prevents electrostatic discharge damage.Further, the present invention prevents electrostatic discharge damageduring manufacturing processes, and in particular, electrostaticdischarge damage in a state up through the manufacture of the pixelelectrode.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B are top views and a circuit diagram, respectively, of asemiconductor device of the present invention;

FIGS. 2A to 2C are cross sectional diagrams of a semiconductor device ofthe present invention;

FIG. 3 is a photograph of a top view of a pixel provided in asemiconductor device of the present invention;

FIGS. 4A and 4B are top views and a circuit diagram, respectively, of asemiconductor device of the present invention;

FIGS. 5A and 5B are top views and a circuit diagram, respectively, of asemiconductor device of the present invention;

FIGS. 6A and 6B are top views and a circuit diagram, respectively, of asemiconductor device of the present invention;

FIGS. 7A to 7D are cross sectional diagrams of a semiconductor device ofthe present invention;

FIG. 8 is a photograph of a top view of a pixel provided in asemiconductor device of the present invention;

FIG. 9 is a photograph of a top view of a pixel provided in asemiconductor device of the present invention;

FIGS. 10A to 10D are circuit diagrams of a semiconductor device of thepresent invention;

FIGS. 11A and 11B are cross sectional diagrams of a semiconductor deviceof the present invention;

FIGS. 12A to 12C are entire view of a semiconductor device of thepresent invention;

FIGS. 13A and 13B are diagrams of a signal line driving circuit and ascanning line driving circuit, respectively;

FIGS. 14A to 14H are diagrams of electronic devices to which the presentinvention is applied;

FIG. 15 is a diagram of a semiconductor device;

FIGS. 16A and 16B are diagrams showing a module;

FIG. 17 is a diagram showing an electric power source circuit;

FIG. 18 is a diagram showing a series regulator;

FIG. 19 is a diagram showing a switching regulator;

FIG. 20 is a diagram showing a band gap circuit;

FIG. 21 is a diagram showing a DC amplifier;

FIG. 22 is a diagram showing an operational amplifier;

FIG. 23 is a diagram showing an operational amplifier; and

FIG. 24 is a diagram showing an electric current source.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment Mode 1

An embodiment mode of the present invention is explained using FIGS. 1Ato 3. FIGS. 1A and 1B show a state up through the manufacture of a pixelelectrode. FIG. 1A is a schematic diagram of a top view (maskingdiagram) of a pixel of a semiconductor device, and FIG. 1B is a circuitdiagram that schematically expresses a circuit structure thereof. FIGS.2A to 2C are cross sectional diagrams of the pixels of FIG. 1A. FIG. 3is a photograph of a panel having an actually manufactured pixel,magnified to approximately 635 times with an optical microscope.

Each of the pixels shown in FIGS. 1A and 1B are disposed in a regionsurrounded by a signal line 17 and an electric power source line 18arranged in a column direction, and a scanning line 20 and a reset line19 arranged in a row direction. Further, each of the pixels has aswitching transistor 11 (hereinafter written as the transistor 11), adriving transistor 12 (hereinafter written as the transistor 12), anerasing transistor 13 (hereinafter written as the transistor 13), aresistor element 14, a capacitor element 15, and a pixel electrode 16.The resistor element 14 and the capacitor element 15 correspond to aprotecting means 21.

The fact that the resistor element 14 and the capacitor element 15,which are the protecting means 21, are disposed can be given as acharacteristic of each of the pixels shown in FIGS. 1A and 1B. Theresistor element 14 relieves sudden changes in the electric potential ofthe transistor 12 caused by excess electric charge that builds up in thepixel electrode 16. More specifically, sudden changes in the electricpotential of a source electrode or a drain electrode of the transistor12 can be relieved by disposing the resistor element 14 between thepixel electrode 16 and the transistor 12 so that the excess electriccharge that builds up in the pixel electrode 16 is not supplied all atonce and directly to the transistor 12.

In this embodiment mode, the resistor element 14 is formed by asemiconductor, and has a resistance value of several tens of kÙ.Specifically, it has a resistance value of 20 kÙ to 200 kÙ. However, thepresent invention is not limited to this, and a metal or the like forforming a gate electrode or a wiring may also be used as a material forforming the resistor element 14. Further, there are also no specificlimitations placed on the shape of the resistor element 14 disposedwithin the pixel, and the shape can be arbitrarily set. In addition,there are also no specific limitations of the resistance value of theresistor element 14, and the constituent material and its shape may bearbitrarily set so that a desired resistance value can be obtained.

Similarly, the capacitor element 15 relieves sudden changes in theelectric potential of the transistor 12 caused by the excess electriccharge that builds up in the pixel electrode 16. More specifically, thecapacitor element 15 accumulates or discharges the excess electriccharge that builds up in the pixel electrode 16. That is, the excesselectric charge that builds up in the pixel electrode 16 is distributedbetween the capacitor element 15 and the transistor 12, and suddenchanges of the electric potential of the source electrode or the drainelectrode of the transistor 12 are thus relieved.

In this embodiment, the capacitor element 15 is formed by a laminate ofa semiconductor, a gate insulating film, and a gate electrode, and has acapacitance value of several hundreds of fF. Specifically, the capacitorelement 15 has a capacitance value of 100 to 200 fF. However, thepresent invention is not limited to this, and the material constitutingthe capacitor element 15 and the shape of the capacitor element 15 canbe set arbitrarily. Further, there are no specific limitations of thecapacitance value of the capacitor element 15, and the constituentmaterial and shape may be arbitrarily set so that a desired capacitancevalue can be obtained.

Further, the fact that the value of (a channel length L)/(a channelwidth W) of the transistor 12 is set to a value equal to or greater than10 can be given as a characteristic other than those described above.The L/W value is normally from 0.1 to 2, but is set to a value equal toor greater than 10 with the present invention. The capacitance valuebetween the gate and the source of the transistor 12 itself is suchlarge, and the transistor 12 can also serve as a capacitor element.

Further, a light-emitting element is structured by wide range ofmaterials covering such as organic materials, inorganic materials, thinfilm materials, bulk materials, and dispersion materials. From amongthese materials, organic light-emitting diodes (OLEDs) which arestructured mainly by organic materials can be given as typicallight-emitting elements. OLEDs have a structure in which there are ananode, a cathode, and a light-emitting layer sandwiched between theanode and the cathode. The light-emitting layer is structured by one ora plurality of materials selected from the materials described above.Further, light emission caused by return to a ground state from asinglet excitation state (fluorescence), and light emission caused byreturn to a ground state from a triplet excitation state(phosphorescence) are included in types of luminescence that occur inthe light emitting layer.

Next, typical cross sectional structures for the semiconductor devicepixel shown in FIG. 1A are shown in FIGS. 2A to 2C. FIGS. 2A to 2C showa state up through the manufacture of the transistor and thelight-emitting element on a substrate. FIG. 2A is a cross sectionaldiagram along the line A-A′ of the pixel of FIG. 1A, and is a crosssectional diagram of the transistor 11 and the transistor 13. FIG. 2B isa cross sectional diagram along the line B-B′, and is a cross sectionaldiagram of the transistor 12, the electric power source line 18, and thesignal line 17. FIG. 2C is a cross sectional diagram along the lineC-C′, and is a cross sectional diagram of the capacitor element 15 andthe pixel electrode 16.

Reference numeral 101 in FIGS. 2A to 2C denotes a substrate. Glasssubstrates, ceramic substrates, quartz substrates, silicon substrates,or plastic substrates (including plastic films) can be used for thesubstrate 101. Further, reference numeral 102 denotes a base film, whichincludes a silicon nitride oxide film, a silicon oxynitride film, or alaminate film of these films.

A semiconductor that constitutes an active layer of the transistor 11and the transistor 13 is formed over the base film 102. The active layerhas a source region 103, a drain region 104, and a source region 107.LDD regions 105 a to 105 d, and channel forming regions 106 a and 106 b,are formed between the source region 103 and the drain region 104, andLDD regions 105 e to 105 h, and channel forming regions 106 c and 106 d,are formed between the drain region 104 and the source region 107,respectively. Note that the active layer of the transistors 11 and 13 isan n-type impurity region. Further, semiconductors 108 to 110 that areto be the active layers of the transistor 12, and a semiconductor thatconstitutes the capacitor element 15 are formed at the same time. Ap-type impurity region 111 and an intrinsic semiconductor region 112 areformed in the semiconductor that constitutes the capacitor element 15.

A gate insulating film 113 is formed over the semiconductors by using asilicon oxide film, a silicon oxynitride film (corresponding to asilicon compound film containing Si at 25 to 35 atomic %, oxygen at 55to 65 atomic %, nitrogen at 1 to 20 atomic %, and hydrogen at 0.1 to 10atomic %), an aluminum nitride film, an aluminum oxide film, an aluminumoxynitride film, or a laminate film of these insulating films and asilicon nitride film. The gate insulating film 113 functions as a gateinsulating film for the transistors 11 to 13. Further, the gateinsulating film functions as a dielectric of the capacitor element 15.

A metallic layer is patterned on the gate insulating film 113 to formgate electrodes 114 and 115 of the transistor 11, gate electrodes 116and 117 of the transistor 13, and gate electrodes 118 and 119 of thetransistor 12. Note that the shapes of a first layer electrode (tantalumnitride film) and a second layer electrode (tungsten film) of the gateelectrodes of the transistors 11 and 13 differ from each other. Thefirst layer electrode has a wider line width than the second layerelectrode. JP 2002-57162 A, by the applicants of the present invention,may be referred to regarding reasons for, and advantages of, thischaracteristic formation method and adopting this type of structure ofgate electrode. Further, electrodes 120 and 121, which construct thecapacitor element 15, are formed together with the gate electrodes.

As a first inorganic insulating film 122, a silicon nitride oxide film(corresponding to a silicon compound film containing Si at 25 to 35atomic %, oxygen at 15 to 30 atomic %, nitrogen at 20 to 35 atomic %,and hydrogen at 15 to 25 atomic %), or a silicon nitride film formed byplasma CVD, is formed to have a thickness of 0.1 to 1 μm (preferablyfrom 0.2 to 0.5 μm) over the gate electrodes, and over the electrodesthat construct the capacitor element 15. The first inorganic insulatingfilm 122 contains hydrogen at a concentration of 15 to 25 atomic %, andtherefore can be made to function as a hydrogen supply source by heattreatment, so that hydrogen termination of the semiconductor, whichconstitutes an active layer, can be performed.

A first organic resin film 123 containing a positive photosensitiveorganic resin is formed over the first inorganic insulating film 122 ata thickness of 0.7 to 5 μm (preferably from 2 to 4 μm). The firstorganic resin film 123 is applied by spin coating and firing. Portionsat which it is desired to form opening portions are then exposed tolight by using a photomask. Specifically, portions for forming wiringsof the transistor 11 and the transistor 13, the gate electrodes 118 and119 of the transistor 12, and a portion for taking the capacitance, areexposed to light. If an opening portion is formed in the first organicresin film 123, the first inorganic insulating film 122 is in a state ofbeing partially exposed in the opening portion.

A silicon oxynitride film, a silicon nitride film, an aluminum nitridefilm, or an aluminum oxynitride film is then formed at a thickness of0.1 to 0.2 μm as a second inorganic insulating film 124, covering thefirst inorganic insulating film 122 exposed partially and the firstorganic resin film 123. The second inorganic insulating film 124functions to suppress the passage of moisture to and from the firstorganic resin film 123.

A contact hole is formed in the gate insulating film 113, the firstinorganic insulating film 122, and the second inorganic insulating film124 by dry etching. By patterning a conductive film formed so as tocover the contact hole, laminates of a 0.1 μm Ti film, a 0.35 μm Alfilm, and a 0.15 μm Ti film are formed as source wirings 125 and 127,and a drain wiring 126. A wiring 128 corresponding to the electric powersource line 18, a wiring 129 corresponding to the signal line 17, and awiring 130 that connects a p-type impurity region 111 and a pixelelectrode 131 are formed at the same time.

Note that a laminate of the gate electrodes 118 and 119 and the wiring128, with the first inorganic insulating film 122 and the secondinorganic insulating film 124 interposed therebetween, corresponds to acapacitor element in FIG. 2B. That is, the above-mentioned laminate anda laminate constructed from the gate insulating film 113 interposedbetween the semiconductors 108 to 110 and the gate electrodes 118 and119, function as two capacitor elements with this structure.Conventional capacitance values of 100 to 500 fF per single transistorcan thus be increased to 1000 to 1200 fF. The two laminates describedabove maintain the voltage between the gate electrode and source of thetransistor 12.

Further, a laminate of the gate electrodes 120 and 121 and the wiring130, with the first inorganic insulating film 122 and the secondinorganic insulating film 124 interposed therebetween, corresponds to acapacitor element in FIG. 2C. This capacitor element plays a role inmaintaining the voltage of the gate electrode of the transistor 12. Alaminate of an intrinsic semiconductor 112 and the gate electrodes 120and 121, with the gate insulating film 113 interposed therebetween, alsofunctions as a capacitor element with this structure. This capacitorelement functions as a protecting means.

Next, a pixel electrode 131 that contacts the wiring 130 is formed bypatterning a transparent conductive film such as ITO. A second organicresin film 132 made from a positive photosensitive organic resin isformed on the pixel electrode 131. The second organic resin film 132 isapplied by spin coating and firing. A portion at which it is desired toform an opening portion is then exposed to light by using a photomask. Astate in which a portion of the pixel electrode 131 is exposed in theopening portion results when the opening portion is formed.

Note that roundness can be provided in the cross section of the openingportion by using a negative or a positive organic resin film with thisstructure. It therefore becomes possible to have good coverage of alight-emitting layer and a counter electrode formed later. Defects,called shrink, in which a light-emitting region is reduced in size, canbe decreased.

An inorganic insulating film that contains nitrogen is then patterned,forming a third inorganic insulating film 124 at a thickness of 0.1 to0.2 μm so as to cover the exposed pixel electrode 131 and the secondorganic resin film 132. A light-emitting layer 134 is formed next byevaporation. In addition, a counter electrode 135 is formed byevaporation. A laminate of the pixel electrode 131, the light-emittinglayer 134, and the counter electrode 135 corresponds to a light-emittingelement. A TFT and the light-emitting element are thus formed on thesubstrate 101.

Next, a photograph of a panel having an actually manufactured pixel isshown in FIG. 3, magnified to approximately 635 times with an opticalmicroscope. Concrete specifications for the pixels are a channel lengthof 390 μm and a channel width of 5 μm for the transistor 12, and channellengths of 4.5 μm for the transistors 11 and 13. Further, the pixelpitch is 189 μm vertically, and 63 μm horizontally, with an apertureratio of 40%.

The present invention, having the structure described above, disposesthe resistor element 14 between the pixel electrode 16 and thetransistor 12 so that the excess electric charge that builds up in thepixel electrode 16 is not supplied all at once and directly to thetransistor 12. Sudden changes in the electric potential of the sourceelectrode or the drain electrode of the transistor 12 are thus relieved.Further, the capacitor element 15 is disposed between the pixelelectrode 16 and the transistor 12, and the excess charge that builds upin the pixel electrode 16 is distributed to the capacitor element 15 andthe transistor 12. Sudden changes in the electric potential of thesource electrode or the drain electrode of the transistor 12 are thusrelieved. The present invention prevents electrostatic discharge damageby relieving sudden changes in the electric potential of the sourceelectrode or the drain electrode of the transistor caused by theelectric charge that builds up in the pixel electrode. Further, thepresent invention prevents electrostatic discharge damage duringmanufacturing processes, and in particular, prevents electrostaticdischarge damage in a state up through the manufacture of the pixelelectrode.

Embodiment Mode 2

An embodiment mode of the present invention is explained using FIGS. 4Ato 9. FIGS. 4A to 6B show a state up through the manufacture of a pixelelectrode. FIG. 4A to 6A are schematic diagrams of a top view (maskingdiagram) of a pixel of a semiconductor device, and FIG. 4B to 6B arecircuit diagrams that schematically express a typical circuit structurethereof. FIGS. 7A to 7D are cross sectional diagrams of the pixels ofFIGS. 4A to 6A. FIGS. 8 and 9 are photographs of a panel having anactually manufactured pixel, magnified to approximately 695 times withan optical microscope.

Each of the pixels shown in FIGS. 4A to 6B is disposed in a regionsurrounded by the signal line 17 and the electric power source line 18,which are arranged in a column direction, and the scanning line 20 andthe reset line 19, which are arranged in a row direction. Further, eachof the pixels has the transistors 11 to 13, and the pixel electrode 16.Each of the pixels shown in FIGS. 4A and 4B have the resistor element 14that corresponds to the protecting means 21. On the other hand, each ofthe pixels shown in FIGS. 5A and 5B has the capacitor element 15 thatcorresponds to the protecting means 21. Each of the pixels shown inFIGS. 6A and 6B has the resistance means 14 and a transistor 22 with aconnection between a gate and a drain thereof, that correspond to theprotecting means 21.

The fact that the resistor elements 14, which are the protecting means21, are disposed can be given as a characteristic of each of the pixelsshown in FIGS. 4A and 4B. The resistor element 14 relieves suddenchanges in the electric potential of the transistor 12 caused by excesselectric charge that builds up in the pixel electrode 16. Morespecifically, sudden changes in the electric potential of a sourceelectrode or a drain electrode of the transistor 12 can be relieved bydisposing the resistor element 14 between the pixel electrode 16 and thetransistor 12, so that the excess electric charge that builds up in thepixel electrode 16 is not supplied all at once and directly to thetransistor 12.

In this embodiment mode, the resistor element 14 is formed by asemiconductor, and has a resistance value of several tens of kÙ.Specifically, it has a resistance value of 20 kÙ to 200 kÙ. However, thepresent invention is not limited to this, and a metal or the like forforming a gate electrode or a wiring may also be used as a material forforming the resistor element 14. Further, there are also no specificlimitations placed on the shape of the resistor element 14 disposedwithin the pixel, and the shape can be arbitrarily set. In addition,there are also no specific limitations placed on the resistance value ofthe resistor element 14, and the constituent materials and shape may bearbitrarily set so that a desired resistance value can be obtained.

The fact that the capacitor elements 15, which are the protecting means21, are disposed can be given as a characteristic of each of the pixelsshown in FIGS. 5A and 5B. The capacitor element 15 relieves suddenchanges in the electric potential of the transistor 12 caused by theexcess electric charge that builds up in the pixel electrode 16. Morespecifically, the capacitor element 15 accumulates or discharges theexcess electric charge that builds up in the pixel electrode 16. Thatis, the excess electric charge that builds up in the pixel electrode 16is distributed to the capacitor element 15 and the transistor 12, andsudden changes of the electric potential of the source electrode or thedrain electrode of the transistor 12 are thus relieved.

The capacitor element 15 is formed by a laminate of a semiconductor, agate insulating film, and a gate electrode in this embodiment, and has acapacitance value of several hundreds of fF. Specifically, the capacitorelement 15 has a capacitance value of 100 to 200 fF. However, thepresent invention is not limited to this, and the materials forming thecapacitor element 15 and the shape of the capacitor element 15 can beset arbitrarily. Further, there are no specific limitations on thecapacitance value of the capacitor element 15, and the constituentmaterials and shape may be arbitrarily set so that a desired capacitancevalue can be obtained.

The fact that the resistor element 14 and the gate-drain connectedtransistor 22, which are the protecting means 21, are disposed can begiven as a characteristic of each of the pixels shown in FIGS. 6A and6B. The gate-drain connected transistor 22 relieves sudden changes inthe electric potential of the transistor 12 caused by excess electriccharge that builds up in the pixel electrode 16. More specifically, asource electrode 23 of the transistor 22 is connected to the electricpower source line 18, or to an electric power source line 24, to whichthe counter electrode of the light-emitting element is connected. Theexcess charge that builds up in the pixel electrode 16 is discharged tothe electric power source line 18 or the electric power source line 24.Sudden changes in the electric potential of the source electrode or thedrain electrode of the transistor 12 are thus relieved. If the sourceelectrode 23 is assumed to be connected to the electric power sourceline 18, the excess charge that builds up in the pixel electrode 16 isdischarged to the electric power source line 18, and the electricpotential of the pixel electrode 16 is set to the electric potential ofthe electric power source line 18 (an electric power source potentialV_(DD)). Further, if the source electrode 23 is connected to theelectric power source line 24, the excess electric charge that builds upin the pixel electrode 16 is discharged to the electric power sourceline 24, and the electric potential of the pixel electrode 16 is set tothe electric potential of the electric power source line 24 (a groundelectric potential V_(SS)). The electric potential of the pixelelectrode 16 is thus set to the electric power source potential V_(DD)or the ground electric potential V_(SS), and sudden changes in theelectric potential of the source electrode or the drain electrode of thetransistor 12 are relieved.

Note that a PN junction diode or a PIN junction diode may also be usedas a substitute for the transistor 22. If a diode is used, one electrodeof the diode is connected to the pixel electrode, and the otherelectrode is connected to an electric power source line. Further,elements having structures other than those described above may also beused, provided that the elements have a rectifying action.

Further, the fact that the value of (the channel length L)/(the channelwidth W) of the transistor 12 is set to a value equal to or greater than10 can be given as a characteristic differing from those describedabove. The value of L/W is normally from 0.1 to 2, but is set equal toor greater than 10 with the present invention. The capacitance betweenthe gate and the source of the transistor 12 itself thus becomes large,and the transistor 12 can also serve as a capacitor element.

Next, typical cross sectional structures for the semiconductor devicepixel shown in FIGS. 4A to 6A are shown in FIGS. 7A to 7D. FIGS. 7A to7D show a state up through the manufacture of the transistor and thelight-emitting element on a substrate. FIG. 7A is a cross sectionaldiagram along the line D-D′ of the pixel of FIGS. 4A to 6A, and is across sectional diagram of the transistor 11 and the transistor 13. FIG.7B is a cross sectional diagram along the line E-E′ of the pixel of FIG.4A, and is a cross sectional diagram of the resistor element 14 and thepixel electrode 16. FIG. 7C is a cross sectional diagram along the lineF-F′ of the pixel of FIG. 5A, and is a cross sectional diagram of thecapacitor element 15 and the pixel electrode 16. FIG. 7D is a crosssectional diagram taken along the line G-G′ of the pixel of FIG. 6A, andis a cross sectional diagram of the transistor 22 and the pixelelectrode 16.

Reference numeral 201 in FIGS. 7A to 7D denotes a substrate. Glasssubstrates, ceramic substrates, quartz substrates, silicon substrates,or plastic substrates (including plastic films) can be used for thesubstrate 201. Further, reference numeral 202 denotes a base film, whichcontains a silicon nitride oxide film, a silicon oxynitride film, or alaminate film of these films.

A semiconductor that constitutes an active layer of the transistor 11and the transistor 13 is formed on the base film 202. The active layerhas a source region 203, a drain region 204, and a source region 207.LDD regions 205 a to 205 d, and channel forming regions 206 a and 206 b,are formed between the source region 203 and the drain region 204, andLDD regions 205 e to 205 h, and channel forming regions 206 c and 206 d,are formed between the drain region 204 and the source region 207,respectively. Note that the active layer of the transistors 11 and 13 isan n-type impurity region. Further, a semiconductor 208 that constitutesthe resistor element 14, and a semiconductor that constitutes thecapacitor element 15 are formed at the same time. A p-type impurityregion 209 and an intrinsic semiconductor 210 are formed for thesemiconductor that constitutes the capacitor element 15. In addition, asemiconductor that makes up an active layer of the transistor 22 isformed. The active layer has a source region 211 and a drain region 212.LDD regions 213 and 214, and a channel forming region 215, are formedbetween the source region 211 and the drain region 212.

A gate insulating film 216 is formed on the semiconductors by using asilicon oxide film, a silicon oxynitride film (corresponding to asilicon compound film containing Si at 25 to 35 atomic %, oxygen at 55to 65 atomic %, nitrogen at 1 to 20 atomic %, and hydrogen at 0.1 to 10atomic %), an aluminum nitride film, an aluminum oxide film, an aluminumoxynitride film, or a laminate film of these insulating films and asilicon nitride film. The gate insulating film 216 functions as a gateinsulating film for the transistors 11, 13, and 22. Further, the gateinsulating film 216 functions as a dielectric of the capacitor element15.

A metallic layer is patterned on the gate insulating film 216, forminggate electrodes 217 and 218 of the transistor 11, gate electrodes 219and 220 of the transistor 13, electrodes 221 and 222 that constitute thecapacitor element 15, and a gate electrode 223 of the transistor 22.Note that a first layer electrode (tantalum nitride film) and a secondlayer electrode (tungsten film) differ in shape each other. The firstlayer electrode has a wider line width than the second layer electrode.

An insulating film containing silicon, such as silicon nitride, isformed as a first interlayer insulating film 224 at a thickness of 0.1μm to 0.2 μm on the gate electrodes and the electrodes that constitutethe capacitor element 15. An insulating film containing an organic resinsuch as acrylic, polyimide, polyamide, or BCB (benzocyclobutene) isformed next as a second interlayer insulating film 225 to have athickness of 0.7 to 5 ì m (preferably, 2 to 4 ì m). An insulating filmthat contains silicon, such as a silicon nitride film, is then formed bysputtering to have a thickness of 0.1 μm to 0.2 μm as a third interlayerinsulating film 226. Note that the second interlayer insulating film 225relieves unevenness due to the transistors formed on a substrate 201,and has strong implications in flattening. A film having superiorflatness characteristics is therefore preferable.

A transparent conductive film such as ITO is then patterned, formingpixel electrodes 234 to 236 to have a thickness of 0.1 μm to 0.2 μm. Acontact hole is then formed in the gate insulating film 216, the firstinterlayer insulating film 224, the second interlayer insulating film225, and the third interlayer insulating film 226 by dry etching. Alaminate of a 0.1 μm Ti film, a 0.35 μm Al film, and a 0.15 μm Ti filmis formed as source wirings 227, 229, and 232, and drain wirings 228 and233, by patterning a conductive film formed so as to cover the contacthole. A wiring 230 that connects the semiconductor 208 and the pixelelectrode 234, and a wiring 231 that connects the p-type impurity region209 and the pixel electrode 235 are formed at the same time. Note thatthe drain wiring 233 connects the drain electrode and the gate electrodeof the transistor 22.

An insulating film made from an organic resin such as acrylic,polyimide, polyamide, or BCB (benzocyclobutene) is formed as a fourthinterlayer insulating film 237 at a thickness of 0.7 to 5 μm (preferablyfrom 2 to 4 μm) on the pixel electrode and the wirings. The fourthinterlayer insulating film 237 is applied by spin coating and firing. Aportion at which it is desired to form an opening portion is thenexposed to light by using a photomask. A state in which portions of thepixel electrodes 234 to 236 are exposed in the opening portion resultswhen the opening portion is formed.

Note that roundness can be provided in the cross section of the openingportion by using the organic resin film with this structure. Ittherefore becomes possible to have good coverage of a light-emittinglayer and a counter electrode formed later. Defects, called shrink, inwhich a light-emitting region is reduced in size, can be decreased.

A light-emitting layer 238 is formed next by evaporation, and inaddition, a counter electrode 239 is formed by evaporation. A laminateof the pixel electrodes 234 to 236, the light-emitting layer 238, andthe counter electrode 239 corresponds to a light-emitting element. A TFTand the light-emitting element can thus be formed over the substrate201.

Photographs of panels having actually manufactured pixels are shown nextin FIGS. 8 and 9, magnified to approximately 695 times with an opticalmicroscope. Each of the pixels shown in FIG. 8 corresponds to the pixelshown in FIGS. 4A and 4B, and the pixels shown in FIG. 9 correspond tothe pixel shown in FIGS. 5A and 5B. Concrete specifications are achannel length of 390 μm and a channel width of 5 μm for the transistor12, and channel lengths of 4.5 μm for the transistors 11 and 13.Further, the pixel pitch is 189 μm vertically, and 63 μm horizontally.Note that the shape of the resistor element 14 in the pixel shown inFIG. 8 differs from that of the pixel shown in FIG. 4A, taking on anS-shape. Furthermore, the transistors 11 and 13 are covered by wiringsin the pixels shown in both FIGS. 8 and 9.

The present invention, having the structure described above, disposesthe resistor element 14 between the pixel electrode 16 and thetransistor 12 so that the excess electric charge that builds up in thepixel electrode 16 is not supplied all at once and directly to thetransistor 12. Sudden changes in the electric potential of the sourceelectrode or the drain electrode of the transistor 12 are thus relieved.Further, the capacitor element 15 is disposed between the pixelelectrode 16 and the transistor 12, and the excess electric charge thatbuilds up in the pixel electrode 16 is distributed to the capacitorelement 15 and the transistor 12. Sudden changes in the electricpotential of the source electrode or the drain electrode of thetransistor 12 are thus relieved. Furthermore, the gate-drain connectedtransistor 22 is disposed between the pixel electrode 16 and thetransistor 12, and the excess electric charge that builds up in thepixel electrode 16 is discharged to the electric power source line,whereby sudden changes in the electric potential of the source electrodeor the drain electrode of the transistor 12 are thus relieved. Thepresent invention thus prevents electrostatic discharge damage byrelieving sudden changes in the electric potential of the sourceelectrode or the drain electrode of the transistor due to the electriccharge that builds up in the pixel electrode. Further, the presentinvention prevents electrostatic discharge damage during manufacturingprocesses, and in particular, prevents electrostatic discharge damage ina state up through the manufacture of the pixel electrode.

Embodiment Mode 3

Circuit diagrams in a state up through the manufacture of the pixelelectrode are shown in Embodiment Modes 1 and 2, discussed above, but acircuit diagram of a state up through the manufacture of alight-emitting element is explained in this embodiment mode by usingFIGS. 10A to 10D.

Pixels shown in FIGS. 10A to 10D correspond to the pixels shown in FIGS.1B, 4B, 5B, and 6B, respectively. A protecting means, which correspondsto one or a plurality of elements selected from the resistor element 14,the capacitor element 15, and the rectifying element 22, is formedbetween the transistor 12 and a pixel electrode of a light-emittinglayer 25 in all of the pixels. Further, a counter electrode of thelight-emitting element 25 is connected to the electric power source line24.

In addition, although the transistors 11 and 13 are n-channel and thetransistor 12 is p-channel in each of the pixels shown in FIGS. 10A to10D, the present invention is not limited in particular to thesetransistor conductivity types. Further, the structure of the pixels isnot limited to the structure having the transistors 11 to 13 and theprotecting means. The essential structure of the present invention isone in which the protecting means is formed in each pixel, and theprotecting means is disposed between the pixel electrode of thelight-emitting element and the source electrode or the drain electrodeof the transistor. For cases in which it is assumed that the protectingmeans is not disposed, the source electrode or the drain electrode ofthe transistor is connected to the pixel electrode of the light-emittingelement.

Note that a transistor having a connection between a drain electrode anda gate electrode thereof, or a diode, may be used as the rectifyingelement 22 in FIG. 10D.

This embodiment mode can be arbitrarily combined with Embodiment Modes 1and 2.

Embodiment Mode 4

In this embodiment mode, a structure of the entire semiconductor devicewill be described with FIGS. 11A to 12B. First, an element substrateprovided with transistors at a state of being sealed by a sealingmaterial will be described using FIGS. 11A and 11B.

FIG. 11A is a cross sectional diagram simply showing a pixel portion anda driving circuit of the pixel shown in FIGS. 1 and 2. In the pixelportion shown in FIG. 11A, although the L/W value of a transistor 12 isoriginally set more than 10, but shown here is simplified. Further, inthe driving circuit, a part of counter electrode 135 is in contact witha leading out wiring 140. The leading out wiring 140 is connected to aninput terminal, which is in contact with a flexible print circuit (FPC).

FIG. 11B illustrates a cross sectional diagram of a part being incontact with the FPC (FPC connection 145). A lead wiring 144 formed fromthe same electronic conductor as gate electrodes is provided on a gateinsulating film 113. The lead wiring 144 is in contact with the leadingout wiring 140 via a contact hole 143 in an opening of a first organicresin 123. An opening is provided on the lead wiring 144, further, afirst inorganic insulating film 122 and a second inorganic insulatingfilm 124 are etched and removed, and the lead wiring 144 is in anexposed state thereby. An input terminal 145 formed from the sametransparent electronic conductor as a pixel electrode is provided on thelead wiring 144. The input terminal 145 is in contact with a terminal152 of the FPC via a conductive resin 150 with anisotropy. Referencenumeral 151 denotes a protective film of the wirings; 153, a film. And,reference numeral 141 denotes a covering material, is sealed by asealing material 142 having high air tightness and less degassing.Subsequently, a structure of the entire semiconductor device will bedescribed with FIGS. 12A to 12C. FIG. 12A is a top view of asemiconductor device formed by sealing an element substrate in whichtransistors are formed with a sealing material. FIG. 12B is a crosssectional diagram along a line B-B′ in FIG. 12A. FIG. 12C is a crosssectional diagram along a line A-A′ in FIG. 12A.

In FIGS. 12A to 12C, a pixel portion (display portion) 402; a signalline driving circuit 403, scanning line driving circuits 404 a and 404b, and a protection means 405, which are provided to surround the pixelportion 402; are all located on a substrate 401, and a seal material 406is provided to surround all these. The structure of the pixel portion402 preferably refers to Embodiment modes described above and thedescription thereof. As the seal material 406, a glass material, ametallic material (typically, a stainless steel material), a ceramicmaterial, or a plastic material (including a plastic film) may be used.

The seal material 406 may be provided to partially overlap with thesignal line driving circuit 403, the scanning line driving circuits 404a and 404 b, and the protection means 405. A sealing material 407 isprovided using the seal material 406, so that a closed space 408 isformed by the substrate 401, the seal material 406, and the sealingmaterial 407. A hygroscopic agent (barium oxide, calcium oxide, or thelike) 409 is provided in advance in a concave portion of the sealingmaterial 407, so that it has a function of absorbing moisture, oxygen,and the like to keep the atmosphere clean in an inner portion of theabove closed space 408, thereby suppressing the deterioration of alight-emitting element. The concave portion is covered with a coveringmaterial 410 with a fine mesh shape. The covering material 410 allowsair and moisture to pass therethrough but not the hygroscopic agent 409.Note that the closed space 408 is preferably filled with a noble gassuch as nitrogen or argon, and can be also filled with a resin or aliquid if it is inert.

Also, an input terminal portion 411 for transmitting signals to thesignal line driving circuit 403 and the scanning line driving circuits404 a and 404 b is provided on the substrate 401. Data signals such asvideo signals are transferred to the input terminal portion 411 througha FPC (flexible printed circuit) 412. With respect to a cross section ofthe input terminal portion 411, as shown in FIG. 12B, an input wiring413 formed from a wiring which is formed together with the scanningwiring or the signal wiring is electrically connected with a wiring 415provided on the FPC 412 side through a resin 417 in which electricconductors 416 are dispersed. Note that a spherical polymer compoundplated with gold or silver is preferably used for the electricconductors 416.

In this embodiment mode, the protection means is provided between theinput terminal 411 and the signal line driving circuit 403, and in pixelportion 402. Upon being input an electrostatic signal such as anunexpected pulse signal therebetween, the protection means 405 providedbetween the input terminal portion 411 and the signal line drivingcircuit 403 releases the pulse signal to the outside. Of course, theprotection means may be provided in other locations, for example, alocation between the pixel portion 402 and the signal line drivingcircuit 403 or locations between the pixel portion 402 and the scanningline driving circuits 404 a and 404 b.

This embodiment mode can be arbitrarily combined with Embodiment Modes 1to 3.

Embodiment Mode 5

In this embodiment mode, the structures and operations of a signal linedriving circuit and a scanning line driving circuit, which controlpixels via signal lines and the like, will be described with referenceto the FIG. 13, respectively.

First, the signal line driving circuit is described with reference tothe FIG. 13A. The signal line driving circuit has a shift register 311,a first latch circuit 312 and a second latch circuit 313. The shiftregister 311 comprises a plurality of flip-flop circuits (FF), and issupplied with a clock signal (S-CLK), a start pulse (S-SP), and a clockinversion signal (S-CLKb). Sampling pulses are output one by oneaccording to the timing of these signals. The sampling pulse output fromthe shift register 311 is input into the first latch circuit 312. Thefirst latch circuit 312 is supplied with digital video signals, which,in turn, are retained in each column according to the timing of theinput of the sampling pulse.

In the first latch circuit 312, when the columns from the first to thelast are filled with the retained video signals, a latch pulse is inputinto the second latch circuit 313 during the horizontal retrace lineperiod. The video signals retained in the first latch circuit 312 aretransferred to the second latch circuit 313, at the same time. Then, theone line of the video signals retained in the second latch circuit 313is input into the signal lines S₁ to S_(x), at the same time. While thevideo signals retained in the second latch circuit 313 are being inputinto the signal lines S₁ to S_(x), sampling pulses are again output fromthe shift register 311. The above operation is repeated.

Next, the scanning line driving circuit is described with reference tothe FIG. 13B. Each scanning line driving circuit has a shift register314 and a buffer 315, respectively. Briefly, the shift register 314outputs sampling pulses one by one according to the clock signal(G-CLK), a start pulse (G-SP) and a clock inversion signal (G-CLKb).Next, the sampling pulses amplified in the buffer 315 are input into thescanning line, and the scanning line is turned to be a selected stateone by one in response to the input of the sampling pulse. The pixelcontrolled by the selected scanning line is supplied with digital videosignals from signal lines S₁ to S_(x) in sequence. A level shiftercircuit may be provided between the shift register 314 and the buffer315. By providing a level shifter circuit, the voltage amplitudes of thelogic circuit portion and the buffer can be altered.

This embodiment mode can be implemented in conjunction with embodimentMode 1, 2, 3 and/or 4.

Embodiment Mode 6

A driving method applied to a semiconductor device of the presentinvention is explained in brief in this embodiment mode.

Analog gray scale methods and digital gray scale methods can be given asrough classifications of driving methods for displaying multiple scaleimages, and both methods can be applied to the semiconductor device ofthe present invention. The difference between the two methods is incontrolling the light-emitting elements when they are in alight-emitting state, and in a non-light-emitting state. The analog grayscale method is a method in which gray scales are obtained bycontrolling the amount of an electric current flowing in thelight-emitting elements. Further, the digital gray scale method is amethod of driving by using only two states, a state in which thelight-emitting elements are on (a state in which the brightness isnearly 100%), and a state in which the light-emitting elements are off(a state in which the brightness is nearly 0%).

A method of combining the digital gray scale method with a surface areagray scale method (hereinafter written to as a surface area gray scalemethod) and a method of combining the digital gray scale method with atime gray scale method (hereinafter written as a time gray scale method)are proposed in order to express multiple gray scales image in thedigital gray scale method.

The surface area gray scale method is a method in which one pixel isdivided into a plurality of sub-pixels, and light emission or non-lightemission is selected for each of the sub-pixels. Gray scales areexpressed by the difference between the surface area over which light isemitted, and the remaining surface area, in the one pixel. Further, asreported in JP 2001-5426 A, the time gray scale method is a method inwhich gray scale expression is performed by controlling the amount oftime during which the light-emitting elements emit light. Specifically,one frame period is divided into a plurality of subframe periods ofdifferent lengths, and selection is made in each period as to whetherthe light-emitting elements emit light or do not emit light. Gray scalesare expressed by the difference in the lengths of time during whichlight is emitted within the one frame period.

The semiconductor device of the present invention can apply the analoggray scale method and the digital gray scale method. Further, singlecolor display and multiple color display can be performed. Note that aplurality of sub-pixels corresponding to the colors R, G, and B areformed in one pixel when performing multiple color display. Even if thesame voltage is applied to each of the sub-pixels, the brightness oflight emitted will differ due to differences in such as transmittance ofcolor filters or the electric current density of each of the R, G, and Bmaterials. It is therefore preferable to change the electric potentialof electric power source lines for each of the sub-pixels thatcorrespond to each of the colors.

It is possible to arbitrarily combine this embodiment mode withEmbodiment Modes 1 to 5.

Embodiment Mode 7

Electronic devices to which the present invention is applied may begiven as a video camera, a digital camera, a goggles-type display (headmount display), a navigation system, a sound reproduction device (suchas a car audio device and an audio set), a lap-top computer, a gamemachine, a portable information terminal (such as a mobile computer, amobile telephone, a portable game machine, and an electronic book), animage reproduction device including a recording medium (morespecifically, an device which can reproduce a recording medium such as adigital versatile disc (DVD) and so forth, and a display for displayingthe reproduced image), or the like. Specific examples thereof are shownin FIGS. 14A to 14H.

FIG. 14A illustrates a light-emitting device which includes a casing2001, a support table 2002, a display portion 2003, a speaker portion2004, a video input terminal 2005 and the like. The present invention isapplicable to the display portion 2003. The light-emitting device is ofthe self-emission-type and therefore requires no backlight. Thus, thedisplay portion thereof can have a thickness thinner than that of theliquid crystal display device. The light-emitting device is includingthe entire display device for displaying information, such as a personalcomputer, a receiver of TV broadcasting and an advertising display.

FIG. 14B illustrates a digital still camera which includes a main body2101, a display portion 2102, an image receiving portion 2103, operationkeys 2104, an external connection port 2105, a shutter 2106, and thelike. The present invention can be applied to the display portion 2102.

FIG. 14C illustrates a lap-top computer which includes a main body 2201,a casing 2202, a display portion 2203, a keyboard 2204, an externalconnection port 2205, a pointing mouse 2206, and the like. The presentinvention can be applied to the display portion 2203.

FIG. 14D illustrates a mobile computer which includes a main body 2301,a display portion 2302, a switch 2303, operation keys 2304, an infraredport 2305, and the like. The present invention can be applied to thedisplay portion 2302.

FIG. 14E illustrates a portable image reproduction device including arecording medium (more specifically, a DVD reproduction device), whichincludes a main body 2401, a casing 2402, a display portion A 2403,another display portion B 2404, a recording medium (DVD or the like)reading portion 2405, an operation key 2406, a speaker portion 2407 andthe like. The display portion A 2403 is used mainly for displaying imageinformation, while the display portion B 2404 is used mainly fordisplaying character information. The present invention can be appliedto these display portions A 2403 and B 2404. The image reproductiondevice including a recording medium further includes a game machine orthe like.

FIG. 14F illustrates a goggle type display (head mounted display) whichincludes a main body 2501, a display portion 2502, an arm portion 2503,and the like. The present invention can be applied to the displayportion 2502.

FIG. 14G illustrates a video camera which includes a main body 2601, adisplay portion 2602, a casing 2603, an external connecting port 2604, aremote control receiving portion 2605, an image receiving portion 2606,a battery 2607, a sound input portion 2608, operation keys 2609, and thelike. The present invention can be applied to the display portion 2602.

FIG. 14H illustrates a mobile telephone which includes a main body 2701,a casing 2702, a display portion 2703, a sound input portion 2704, asound output portion 2705, operation keys 2706, an external connectingport 2707, an antenna 2708, and the like. The present invention can beapplied to the display portion 2703. Note that the display portion 2703can reduce power consumption of the mobile telephone by displayingwhite-colored characters on a black-colored background.

When a brighter luminance of light-emitting materials becomes availablein the future, the light-emitting device of the present invention willbe applicable to a front-type or rear-type projector in which lightincluding output image information is enlarged by means of lenses or thelike to be projected.

The aforementioned electronic devices are more likely to be used fordisplay information distributed through a telecommunication path such asInternet, a CATV (cable television system), and in particular likely todisplay moving picture information. Since the response speed of thelight-emitting materials is very high, the light-emitting device ispreferably used for moving picture display.

A portion of the light-emitting device that is emitting light consumespower, so it is desirable to display information in such a manner thatthe light-emitting portion therein becomes as small as possible.Accordingly, when the light-emitting device is applied to a displayportion which mainly displays character information, e.g., a displayportion of a portable information terminal, and more particular, amobile telephone or a sound reproduction device, it is desirable todrive the light-emitting device so that the character information isformed by a light-emitting portion while a non-emission portioncorresponds to the background.

As set forth above, the present invention can be applied variously to awide range of electronic devices in all fields. The electronic devicesin this embodiment mode can be obtained by utilizing a light-emittingdevice having a structure in which the structures in Embodiment Modes 1through 6 are arbitrarily combined.

Embodiment Mode 8

A module with a mounted IC that contains a controller, electric powersource circuit, and the like is loaded in a panel in a state in which alight-emitting element is sealed in the electronic devices shown inEmbodiment Mode 7. The module and the panel both correspond toembodiments of a display device. The specific structure of the module isexplained here.

A schematic diagram of the module in which a controller 801 and anelectric power source circuit 802 are mounted into a panel 800 is shownin FIG. 16A. A pixel portion 803 in which a light-emitting element isformed in each pixel, a scanning line driving circuit 804 for selectingpixels in the pixel portion 803, and a signal line driving circuit forsupplying a video signal to the selected pixels are formed in the panel800. Further, the controller 801 and the electric power source circuit802 are formed in a printed substrate 806. Each type of signal and anelectric power source voltage output from the controller 801 or theelectric power source circuit 802 is supplied through an FPC 807 to thepixel portion 803, the scanning line driving circuit 804, and the signalline driving circuit 805 of the panel 800. The electric power sourcevoltage and each type of signal are supplied to the printed substrate806 through an interface (I/F) portion 808 on which a plurality of inputterminals are disposed.

Note that although the printed substrate 806 is mounted via an FPC tothe panel 800 in this embodiment, the structure is not alwaysnecessarily limited to this. The controller 801 and the electric powersource circuit 802 may also be mounted directly to the panel 800 byusing a COG (chip on glass) method. Further, noise may ride on theelectric power source voltage and the signals, and the signal rise timemay become slowed, due to capacitances that are formed between leadingwirings, resistance of wirings themselves, and the like in the printedcircuit 806. Various types of elements, such as capacitors and buffers,may be formed in the printed substrate 806 so as to prevent noise fromriding on the electric power source voltage or the signals, and slownessin the signal rise time.

A block diagram of the structure of the printed substrate 806 is shownin FIG. 16B. Each of the signals and the electric power source voltagesupplied by to the interface 808 is supplied to the controller 801 andthe electric power source circuit 802. The controller 801 has an analoginterface circuit 809, a phase locked loop (PLL) 810, a control signalgenerator circuit 811, and SRAMs (static random access memories) 812 and813. Note that, although SRAMs are used here, it is also possible to useSDRAMs or DRAMs (dynamic random access memories) as substitutes for theSRAM, provided that the DRAMs are capable of writing and reading data ata high speed.

An analog video signal supplied through the interface 808 undergoes A/Dconversion and parallel-serial conversion in the analog interfacecircuit 809, and is input to the control signal generator circuit 811 asa digital video signal corresponding to the colors R, G, and B. Further,an Hsync signal, a Vsync signal, a clock signal CLK, and the like aregenerated in the analog interface circuit 809 based on each of thesignals supplied through the interface 808, and then input to thecontrol signal generator circuit 811. The analog interface circuit 809need not be disposed if a digital video signal is input directly intothe interface 808.

The phase locked loop 810 functions to align the phase of the operatingfrequency of the control signal generator circuit 811 with the frequencyof each of the signals supplied through the interface 808. The operatingfrequency of the control signal generator circuit 811 is not necessarilythe same as the frequency of each of the signals supplied through theinterface 808. The operating frequency of the control signal generatorcircuit 811 is regulated in the phase locked loop 810 so that thefrequencies become synchronized.

The video signal input to the control signal generator circuit 811 istemporarily written into the SRAMs 812 and 813, and stored. A videosignal corresponding to all pixels is read out one bit at a time fromthe video signals of all of the bits that are stored in the SRAM 812,and then supplied to the signal line driving circuit 805 of the panel800. The control signal generator circuit 811 supplies information,which relates to light emission periods by the light-emitting elementsfor each bit, to the scanning line driving circuit 804 of the panel 800.The electric power source circuit 802 supplies a predetermined electricpower source voltage to the signal line driving circuit 805, thescanning line driving circuit 804, and the pixel portion 803 of thepanel 800.

The structure of the electric power source circuit 802 is explained nextusing FIG. 17. The electric power source circuit 802 includes aswitching regulator 854 that uses four switching regulator controls 860,and a series regulator 855. Switching regulators are generally small insize and lightweight compared to series regulators, and it is possibleto have a repeated voltage rises and positive-negative inversionswithout a drop in a voltage. On the other hand, series regulators areonly used in voltage step-down, but have a good precision outputvoltage, and almost no ripple and no noise, compared to switchingregulators. Both types are combined and used as the electric powersource circuit 802 of this embodiment.

The switching regulator 854 shown in FIG. 17 has switching regulatorcontrols (SWR) 860, attenuators (ATT) 861, transformers (T) 862,inductors (L) 863, a reference voltage source (Vref) 864, an oscillatorcircuit (OSC) 865, diodes 866, bipolar transistors 867, a variableresistance 868, and a capacitor 869. If a voltage from an external Liion battery (3.6 V) or the like is converted in the switching regulator854, an electric power source voltage imparted to a cathode, and anelectric power source voltage supplied to the switching regulator 854are generated.

The series regulator 855 has a band gap circuit (BG) 870, an amplifier871, op amps 1 to 6, a current source 873, variable resistances 874, andbipolar transistors 875. The electric power source voltages generated inthe switching regulator 854 are supplied. DC electric power sourcevoltages imparted to wirings (electric current supply lines) in order tosupply a current to anodes of each color of the light-emitting elementsare generated by the series regulator 855, using the electric powersource voltages generated in the switching regulator 854, based on afixed voltage generated in the band gap circuit 870.

Note that the current source 873 is used for cases of a driving methodin which a video signal current is written into the pixels. In thiscase, the current generated in the current source 873 is supplied to thesignal line driving circuit 805 of the panel 800. Note that it is notalways necessary to form the current source 873 for driving methods inwhich a video signal voltage is written into the pixels.

Operation in the series regulator 855, which is a structural element ofthe electric power source circuit 802, is explained next in brief usingFIG. 18. A reference voltage is generated by the band gap circuit 870,and the reference voltage is amplified by the amplifier 871. A 10 Velectric power source is made here. Further, the voltage generated bythe band gap circuit 870 is also used in the current source 873.

Note that the band gap circuit 870 is controlled by an external on/offterminal. The external on/off terminal is disposed because there aretimes when the voltage supplied from the switching regulator 854 is notstable, mainly during electric power source start up and the like. Ifused as it is, it is difficult to obtain a desired signal from the bandgap circuit 870. A delay is provided by the on/off terminal, suppressingthis phenomenon.

The op amp 1 supplies a voltage of +5V supplied by dividing a voltage of+10V supplied from the amplifier 871 using an internal resistance, andfunctions as a buffer. The op amp 2 supplies a voltage of +8V suppliedby converting the voltage of +10V supplied from the amplifier 871 usingan internal resistance, and functions as a buffer. The op amp 3 suppliesa voltage supplied by dividing the voltage of +10V from the amplifier871 using an external variable resistance, and functions as a buffer.The op amps 4-6 supply a voltage supplied by dividing the voltage of+10V supplied from the amplifier 871 using an external variableresistance, and functions as a buffer. Note that the op amps 4 to 6 usetransistors 875 in final output stages because a large amount of anoutput current is necessary. The current source 873 converts thereference voltage generated by the band gap circuit 870 to a current byusing an external resistance, performs inversion by an internal currentmirror, and outputs the inverted current. The current source 873 isnecessary in order to make temperature changes small because there aretimes cases when the amount of a current supplied varies due totemperature changes. The series regulator 855 forms six DC voltagesources by using a +12 V voltage source that is structured by theswitching regulator 854.

The structure and operation in the switching regulator 854, which is astructural element of the electric power source circuit 802, isexplained next in brief using FIG. 19. The switching regulator controls(SWR) 860 are structured by differential amplifiers 1 to 4, comparators1 to 4, and output circuits 1 to 4. The ATTs 861 are structured fromresistances 890 and 891. The differential amplifiers 1 to 4 detect theoutput voltage of the switching regulator. The voltage gain is fixed forthe differential amplifiers 1 to 4, and phase compensation stabilizedwith respect to the system can be achieved. The controllers 1 to 4 arevoltage comparators that possess one inverted input and two non-invertedinputs, and are voltage-pulse width converters that control output pulseon time corresponding to the input voltage. Structural elements of theswitching regulator 854 other than those described above have alreadybeen discussed, and are therefore omitted here.

The transistor 867 is always operated in an on mode or an off mode inthe switching regulator 854. The DC output voltage can be stabilized bychanging the ratio of time in this mode. Voltage losses in thetransistor 867 are therefore small, and an electric power source havinga good voltage conversion efficiency results. However, the on/offswitching frequency is a high frequency, and therefore the transformer862 can be made small. The switching regulator 854 here structures sixDC electric power sources, in which a voltage of +3.6 V is input andthen stepped up. The output voltages become +12 V, −2 V, +8 V, −12 V, +5V, and −3 V. Among these, +12 V and −2 V are generated from the samecircuit, and +5 V and −3 V are generated from the same circuit.

The structures of the on/off terminal and the band gap circuit 870 areexplained next using FIG. 20. The band gap circuit 870 is structured bytransistors 892 to 899, and resistors 900 to 903. An output terminal isconnected to the amplifier 871. The band gap circuit 870 having thestructure of FIG. 20 functions to generate a reference voltage.

The structure of the amplifier (DC amplifier) 871, which is a structuralelement of the series regulator 855, is explained next using FIG. 21.The amplifier 871 has transistors 905 to 915, resistors 916 to 920, anda capacitor 922. Signals are supplied to an input terminal from the bandgap circuit 870. Signals output from an output terminal are supplied tothe op amps 1 to 6.

The structure of the op amps 1 to 3 is explained using FIG. 22. The opamps 1 to 3 have transistors 925 to 935 and 940, resistors 936 to 939and 941, and a capacitor element 942. Signals from the band gap circuit870 are supplied to an input terminal. Signals output from an outputterminal are supplied to the panel 800.

The structure of the op amps 4 to 6 is explained using FIG. 23. The opamps 4 to 6 have transistors 945 to 955 and 960, resistors 956 to 959,961, and 962, and a capacitor element 962. Signals from the band gapcircuit 870 are supplied to an input terminal. Signals output from anoutput terminal are imparted to a wiring (current supply line) in orderto supply a current to the anode of each color of the light-emittingelements.

The structure of the current source 873 is explained using FIG. 24. Thecurrent source 873 has transistors 965 to 973, resistors 974 to 980, andcapacitor elements 981 and 982. Signals from the band gap circuit 870are supplied to an input terminal.

The controller 801 and the electric power source circuit 802 having thestructure described above are mounted to the panel 800, thus completinga module, which is an embodiment mode of the present invention.

The present invention disposes a resistor element between a pixelelectrode and a transistor, so that excess electric charge that buildsup in the pixel electrode is not supplied all at once and directly tothe transistor. Sudden changes in the electric potential of a sourceelectrode or a drain electrode of the transistor are thus relieved.Further, a capacitor element is disposed between the pixel electrode andthe transistor, so that the excess charge that builds up in the pixelelectrode is distributed to the capacitor element and the transistor.Sudden changes in the electric potential of the source electrode or thedrain electrode of the transistor are thus relieved.

Further, a diode is disposed between the pixel electrode and thetransistor so that the excess charge that builds up in the pixelelectrode is discharged to an electric power source line. Sudden changesin the electric potential of the source electrode or the drain electrodeof the transistor are thus relieved. The present invention thus preventselectrostatic discharge damage by relieving sudden changes in theelectric potential of the source electrode or the drain electrode of thetransistor caused by the electric charge that builds up in the pixelelectrode. Further, the present invention prevents electrostaticdischarge damage during manufacturing processes, and in particular,electrostatic discharge damage in a state up through the manufacture ofthe pixel electrode.

1. A display device comprising: a first substrate including a pixelportion; a transistor, a capacitor, and a light-emitting elementincluded in the pixel portion, the light-emitting element comprising alight emitting layer including an organic compound; a scan line drivercircuit over the first substrate; a second substrate over the firstsubstrate; and a sealing material interposed between the first substrateand the second substrate, wherein the pixel portion and the scan linedriver circuit are sealed by the first substrate, the second substrate,and the sealing material, and wherein the sealing material includes aglass material.
 2. The display device according to claim 1, wherein thetransistor is a top gate transistor.
 3. The display device according toclaim 1, wherein the transistor includes LDD regions.
 4. The displaydevice according to claim 1, wherein a value of (a channel length L)/(achannel width W) of the transistor is set to a value equal to or greaterthan
 10. 5. The display device according to claim 1, wherein oneelectrode of the capacitor is connected to the light-emitting element.6. The display device according to claim 1, further comprising aresistor, wherein the transistor is electrically connected to thelight-emitting element through the resistor.
 7. A display devicecomprising: a first substrate including a pixel portion; a transistor, acapacitor, and a light-emitting element included in the pixel portion,the light-emitting element comprising a light emitting layer includingan organic compound; a first scan line driver circuit over the firstsubstrate; a second scan line driver circuit over the first substrate; asecond substrate over the first substrate; and a sealing materialinterposed between the first substrate and the second substrate, whereinthe pixel portion, the first scan line driver circuit, and the secondscan line driver circuit are sealed by the first substrate, the secondsubstrate, and the sealing material, and wherein the sealing materialincludes a glass material.
 8. The display device according to claim 7,wherein the transistor is a top gate transistor.
 9. The display deviceaccording to claim 7, wherein the transistor includes LDD regions. 10.The display device according to claim 7, wherein a value of (a channellength L)/(a channel width W) of the transistor is set to a value equalto or greater than
 10. 11. The display device according to claim 7,wherein one electrode of the capacitor is connected to thelight-emitting element.
 12. The display device according to claim 7,further comprising a resistor, wherein the transistor is electricallyconnected to the light-emitting element through the resistor.
 13. Adisplay device comprising: a first substrate including a pixel portion;a transistor, a capacitor, a light-emitting element, and a power sourceline included in the pixel portion, the light-emitting elementcomprising a light emitting layer including an organic compound; asecond substrate over the first substrate; and a sealing materialinterposed between the first substrate and the second substrate, whereinthe transistor comprises a semiconductor layer including a channelformation region, and wherein the power source line is overlapped withat least a part of the channel formation region of the semiconductorlayer.
 14. The display device according to claim 13, wherein thetransistor is a top gate transistor.
 15. The display device according toclaim 13, wherein the transistor includes LDD regions.
 16. The displaydevice according to claim 13, wherein a value of (a channel length L)/(achannel width W) of the transistor is set to a value equal to or greaterthan
 10. 17. The display device according to claim 13, wherein oneelectrode of the capacitor is connected to the light-emitting element.18. The display device according to claim 13, further comprising aresistor, wherein the transistor is electrically connected to thelight-emitting element through the resistor.
 19. The display deviceaccording to claim 13, wherein the power source line extends in parallelwith a channel direction of the semiconductor layer.
 20. A displaydevice comprising: a first substrate including a pixel portion; atransistor, a capacitor, a light-emitting element, and a power sourceline included in the pixel portion, the light-emitting elementcomprising a light emitting layer including an organic compound; a scanline driver circuit over the first substrate; a second substrate overthe first substrate; and a sealing material interposed between the firstsubstrate and the second substrate, wherein the pixel portion and thescan line driver circuit are sealed by the first substrate, the secondsubstrate, and the sealing material, wherein the sealing materialincludes a glass material, wherein the transistor comprises asemiconductor layer including a channel formation region, and whereinthe power source line is overlapped with at least a part of the channelformation region of the semiconductor layer.
 21. The display deviceaccording to claim 20, wherein the transistor is a top gate transistor.22. The display device according to claim 20, wherein the transistorincludes LDD regions.
 23. The display device according to claim 20,wherein a value of (a channel length L)/(a channel width W) of thetransistor is set to a value equal to or greater than
 10. 24. Thedisplay device according to claim 20, wherein one electrode of thecapacitor is connected to the light-emitting element.
 25. The displaydevice according to claim 20, further comprising a resistor, wherein thetransistor is electrically connected to the light-emitting elementthrough the resistor.
 26. The display device according to claim 20,wherein the power source line extends in parallel with a channeldirection of the semiconductor layer.
 27. A display device comprising: afirst substrate including a pixel portion; a transistor, a capacitor, alight-emitting element, and a power source line included in the pixelportion, the light-emitting element comprising a light emitting layerincluding an organic compound; a first scan line driver circuit over thefirst substrate; a second scan line driver circuit over the firstsubstrate; a second substrate over the first substrate; and a sealingmaterial interposed between the first substrate and the secondsubstrate, wherein the pixel portion, the first scan line drivercircuit, and the second scan line driver circuit are sealed by the firstsubstrate, the second substrate, and the sealing material, wherein thesealing material includes a glass material, wherein the transistorcomprises a semiconductor layer including a channel formation region,and wherein the power source line is overlapped with at least a part ofthe channel formation region of the semiconductor layer.
 28. The displaydevice according to claim 27, wherein the transistor is a top gatetransistor.
 29. The display device according to claim 27, wherein thetransistor includes LDD regions.
 30. The display device according toclaim 27, wherein a value of (a channel length L)/(a channel width W) ofthe transistor is set to a value equal to or greater than
 10. 31. Thedisplay device according to claim 27, wherein one electrode of thecapacitor is connected to the light-emitting element.
 32. The displaydevice according to claim 27, further comprising a resistor, wherein thetransistor is electrically connected to the light-emitting elementthrough the resistor.
 33. The display device according to claim 27,wherein the power source line extends in parallel with a channeldirection of the semiconductor layer.